In a memory cell array, a plurality of memory cells having ferroelectric capacitors amplifies the potential of the bit lines of each memory cell. 半导体存储装置。在存储单元阵列中设置具有铁电电容器的多个存储单元。多个检测放大器电路使各存储单元的位线的电位放大。
A method of fabricating a nonvolatile memory device includes preparing a semiconductor substrate including a cell array region. 一种非易失性存储器件的制造方法,包括制备包括单元阵列区的半导体衬底。
A divided memory cell array architecture and high speed hierarchical sense amplifiers are employed in the design to optimize the structure of the circuit. 通过采用存储阵列的分块、敏感放大器的分级等技术,对电路的结构进行了优化。
Demand drives technical progress. Recently DRAM makes fast technical reform which including access speed increasing, memory capability increasing, cell array densify and cell cost down. 需求推动技术进步,近年来DRAM在存取速度的提升,记忆容量的增加,集成度及单位位元成本的降低等方面的技术革新速度都是非常快速的。
With the development of microelectronics technology, size of memory cell is becoming smaller and smaller, and the integration of the storage array is still rising. 随着微电子工艺的发展,存储单元的尺寸逐渐变小,存储阵列的集成密度也不断提高。
Since the single ended read memory cell is adapted, the area of memory array is dramatically reduced. The total area of the register file is reduced to 0.01 mm2. 由于采用了单位线读存储单元,存储阵列的面积大大下降,整个寄存器文件的面积下降为0.01mm2。